december 2011 ?2011 fairchild semiconductor corporation FDMS8018 rev . c www.fairchildsemi.com 1 FDMS8018 n-channel powertrench ? mosfet FDMS8018 n-channel powertrench ? mosfet 30 v, 120 a, 1.8 m features ? max r ds(on) = 1.8 m at v gs = 10 v, i d = 30 a ? max r ds(on) = 2.4 m at v gs = 4.5 v, i d = 26 a ? advanced package and silic on combination for low r ds(on) and high efficiency ? next generation enhanced body diode technology, engineered for soft recovery ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall efficien cy and to minimize switch node ringing of dc/dc converters using either synchronous or conventional switching pwm c ontrollers.it has been optimized for low gate charge, low r ds(on) , fast switching speed ang body diode reverse recovery performance. applications ? vrm vcore switching for desktop and server ? oringfet / load switching ? dc-dc conversion ? motor bridge switch power 56 d d d d g s s s pin 1 bottom top pin 1 d d d d s s s g mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 120 a -continuous (package limited) t c = 100 c 100 -continuous (silicon limited) t c = 25 c 174 -continuous t a = 25 c (note 1a) 30 -pulsed 180 e as single pulse avalanche energy (note 3) 126 mj p d power dissipation t c = 25 c 83 w power dissipation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.5 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS8018 FDMS8018 power 56 13 ?? 12 mm 3000 units
www.fairchildsemi.com 2 FDMS8018 rev . c FDMS8018 n-channel powertrench ? mosfet 50 c/w when mounted on a 1 in 2 pad of 2 oz copper 125 c/w when mounted on a minimum pad of 2 oz copper. a) b) electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 14 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.5 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 30 a 1.5 1.8 m v gs = 4.5 v, i d = 26 a 1.9 2.4 v gs = 10 v, i d = 30 a, t j = 125 c 2.2 2.7 g fs forward transconductance v ds = 5 v, i d = 30 a 194 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 3935 5235 pf c oss output capacitance 1380 1835 pf c rss reverse transfer capacitance 137 210 pf r g gate resistance 0.9 t d(on) turn-on delay time v dd = 15 v, i d = 30 a, v gs = 10 v, r gen = 6 15 27 ns t r rise time 7.3 15 ns t d(off) turn-off delay time 38 62 ns t f fall time 4.8 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 30 a 58 61 nc q g total gate charge v gs = 0 v to 4.5 v 28 39 nc q gs gate to source charge 10.3 nc q gd gate to drain ?miller? charge 7.7 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.67 1.1 v v gs = 0 v, i s = 30 a (note 2) 0.77 1.2 t rr reverse recovery time i f = 30 a, di/dt = 100 a/ s 43 69 ns q rr reverse recovery charge 25 40 nc t rr reverse recovery time i f = 30 a, di/dt = 300 a/ s 34 55 ns q rr reverse recovery charge 46 72 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. starting t j = 25 c; n-ch: l = 0.3 mh, i as = 29 a, v dd = 27 v, v gs = 10 v. 4.as an n-ch device, the negative vgs rating is for low duty cycle pulse occurrence only. no continuous rating is implied. g df ds sf ss g df ds sf ss
www.fairchildsemi.com 3 FDMS8018 rev c FDMS8018 n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0 0.5 1.0 1.5 2.0 2.5 0 30 60 90 120 150 180 v gs = 3.5 v v gs = 3 v v ds , drain to source voltage (v) i d , drain current (a) v gs = 4.5 v v gs = 4 v v gs = 10v pulse duration = 80 p s duty cycle = 0.5% max on region characteristics figure 2. 0 30 60 90 120 150 180 0 1 2 3 4 5 v gs = 4 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4.5 v v gs = 3 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 i d = 30 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 2 4 6 8 t j = 125 o c i d = 30 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 30 60 90 120 150 180 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 1000 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 FDMS8018 rev c FDMS8018 n-channel powertrench ? mosfet figure 7. 0 102030405060 0 2 4 6 8 10 i d = 30 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 50 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1000 1 10 100 200 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 50 100 150 200 limited by package v gs = 4.5 v r t jc = 1.5 o c/w v gs = 10 v i d , drain current (a) t c , c ase temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 500 100 us 1 ms 1 s 10 ms dc 10 s 100 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 125 o c/w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 5000 single pulse r t ja = 125 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 FDMS8018 rev c FDMS8018 n-channel powertrench ? mosfet figure 13. 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0004 0.001 0.01 0.1 1 single pulse r t ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 FDMS8018 rev . c FDMS8018 n-channel powertrench ? mosfet dimensional outlin e and pad layout c l l c pkg pkg 5.10 4.90 6.25 5.90 c 1.27 3.81 3.86 3.61 0.71 0.44 chamf er corner as pin #1 ident may appear as optional top view side view bottom view 1.27 3.81 1.27 6.61 3.91 4.52 1.27 1234 85 6 7 1 4 8 5 land pattern recommendation 12 34 876 0.10 c a b 0.46 0.36 (8x) 4.29 4.09 5 0.71 0.44 0.77 a b (0.39) 0.61 notes: unless otherwise specified a) package standard reference: jedec mo-240, issue a, var. aa, dated october 2002. b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-1994. e) it is recommended to have no traces or vias within the keep out area. f) drawing file name: pqfn08arev6. see detail a detail a scale: 2:1 0.05 0.00 0.30 0.20 0.08 c 6.25 5.90 5.85 5.65 5.10 4.90 6 optional draft angle may appear on four sides of the package pin #1 ident may appear as optional seating plane 0.10 c 1.10 0.90 option - a (sawn type) option - b (punched type) keep out area (1.19) (1.81) (0.50) (3.40) (0.52) 0.15 max (2x) 5.10 3.75
FDMS8018 n-channel powertrench ? mosfet FDMS8018 rev . c www.fairchildsemi.com 7 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? tm ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fa irchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems su ch as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping th is practice by buying direct or from authorized distributors. rev. i60 tm ?
|
